We specialize in producing single-crystal lithium niobate & lithium tantalate thin films, and provide professional processing services.
Inject Energy
35-400KeV
Size
3,4,6,8 inch
Implanted Ion Specie
H+，H2+，H3+, He+, Ar+
Technical indicators:
Ion Implantation Foundry Services
Oxidation Foundry
Size
3、4、6 inch
Thickness
200nm-10um
TTV
＜±2%
技术指标：
Plasma Enhanced Chemical Vapor Deposition (PECVD) Foundry
Size
3、4、6 inch
Thickness
200nm-5μm
TTV
＜±5%
Technical indicators:
Magnetron Sputtering
Size
3、4 inch
Metal
Cr、Au
Thickness
100-400nm
TTV
＜±10%
Technical indicators:
Large-beam, high-efficiency mass-produced ion implantation equipment has been put into production, realizing the localization of core equipment, and some of the performance exceeds that of imported equipment; it has been applied to the second phase of the production line.
The accelerating voltage of the implanter controls the ion energy and depth, and the electrical scanning or mechanical scanning ensures the accuracy, and the film is very uniform; the thickness of the film varies by about 5nm after separation.
LN/LT Thin Film Mass Production Ion Implantation Equipment
The thermal oxide layer of the silicon wafer has higher uniformity and higher dielectric strength. In many silicon-based devices, thermal oxide layers play an important role as doping stop layers and surface dielectrics. The existing equipment can meet the requirements from 10nm-8um, the four-inch production capacity is 100 pieces per furnace, and the uniformity is below 2%, which has been applied to the second-stage production line.
LPCVD system (low pressure chemical vapor deposition system), covering processes including: LTO (silicon dioxide), PSG (phosphosilicate glass), SIPOS (semi-insulating polysilicon), POLY (polysilicon), SI3N4 (silicon nitride), TEOS, etc. . The existing equipment can carry out POLY and TEOS, the production capacity is 100 pieces per tube, the uniformity is within ±5%, and the monthly production capacity of the equipment can reach 9000 pieces